Superconducting through-silicon vias (TSVs) are critical components for building scalable superconducting quantum computing (SQC) platforms. By incorporating TSVs, we can significantly increase the number of qubits, achieve higher integration densities, and enhance coherence times, which are all essential for advancing quantum computing technologies. Among materials for superconducting applications, niobium nitride (NbN) is an excellent choice due to its high critical temperature (Tc), making it particularly suitable for applications beyond the ultra-low temperatures of dilution refrigerators.
To fabricate high-quality TSVs, we employed the Bosch process, which enabled us to achieve via depths greater than 300 µm. To optimize the surface quality, we further applied a dry plasma etching technique to reduce interface roughness. Sidewall roughness was measured using Atomic Force Microscopy (AFM), which confirmed that these processes yielded smooth, high-quality surfaces ideal for quantum applications.
In this presentation, Dr Ren will outline the methods used in the fabrication of superconducting quantum devices, with a focus on surface preparation techniques and superconductivity testing results. Additionally, Dr Kocun will introduce AFM instrumentation (Asylum Research Jupiter XR), AFM methods, and will define the key considerations regarding surface roughness measurements.
You will learn:
- Latest advances in plasma polishing
- Superconducting quantum computing and through silicon vias (TSV)
- AFM characterization of sidewall roughness
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