The Best Gate Dielectric For Your GaN Device

New GaN power electronics are being developed for power conversion and delivery. In electric transportation such as electric and hybrid electric vehicles (EV and HEV), these devices are becoming increasingly important and device cost and efficiencies are critical for their success.

In this webinar, Dr Aileen O'Mahony talks about the best ALD solutions for GaN HEMT devices. We'll demonstrate how to achieve the high film quality and low interface defect density needed to provide the best GaN device performance and how to achieve the following:

• Excellent film uniformity
• Optimised process conditions for low substrate damage
• High material quality for superior device performance
• Conformal deposition