POWER DEVICES

Optimising ALD High-k Oxides for Novel Applications

Watch on demand

Dr Uwe Schroeder and Dr Harm Knoops will discuss the ALD of ferroelectric HfO2 for novel memory applications and the tuning properties of TiO2 and HfO2 by substrate biasing during Plasma ALD.

Watch on demand
On Demand
Time:

On Demand

Duration:

50 minutes

Language:

English

Businesses:

Plasma Technology

In Partnership With

Speakers

Dr Harm Knoops - Oxford Instruments Plasma Technology
Atomic Scale Segment Specialist

Dr Harm Knoops is the Atomic Scale Segment Specialist at Oxford Instruments Plasma Technology and holds a part-time assistant p...

Dr Uwe Shroeder - NaMLab Gmbh
Deputy Scientific Director

Daniel obtained his PhD in Physics from the University of Regensburg in 2009. In the same year, he joined AMO GmbH and become t...


 
 

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