The use of GaN HEMTs and GaN MISHEMTS offers many benefits for power devices, including high breakdown field, high-temperature operation, and their strong spontaneous and piezoelectric polarization-induced 2D electron gas (2DEG) of high carrier density and mobility. Oxford Instruments and LayTec have partnered to launch innovative solutions to support the high volume manufacture of reliable GaN HEMT devices for power electronics applications. This market is projected to be $1billion in size by 2030 and improved manufacturability of GaN HEMTs is critical to enabling very high growth applications such as USB-C fast-chargers, automated vehicles and datacentres. Through our shared expertise in atomic scale processing and precision in-situ etch depth monitoring, Oxford Instruments and LayTec have solved a key technology challenge – fabrication of a GaN recessed gate MISHEMT with precise control of the etched AlGaN thickness accuracy (+/-0.5 nm) to achieve normally-off device operation.
In this webinar, Dr Matthew Loveday and Dr Marcello Binetti will share our recent results on our low damage, and repeatable atomic layer etch process that has been validated at ITRI through the fabrication of normally-off GaN recessed gate MISHEMTs.
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Duration:1 hour
Language:English
Businesses:Plasma Technology
Since graduating Cardiff University with a PhD in Chemistry, Matthew has been working on dry etch processes for compound semico...
After graduating in Physics at the University of Bari, Marcello Binetti gained his PhD in Physical Chemistry from the Universit...
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