The SPIE AR|VR|MR 2025 conference is a leading augmented, virtual, and mixed-reality hardware event. The gathering features discussions on digital optics, near-eye displays, advanced materials, light sources, optical engines, and complete optical architectures. The conference focuses on hardware and enabled content, combined with visionary industry perspectives from technology leaders.
Achieve precise and consistent plasma etch, deposition and interface optimisation for features used in datacom, augmented reality and quantum devices, using atomic layer etch, atomic layer deposition, ICP (etch & dep) and PECVD.
Measure crystal homogeneity, material stress and strain in 3D with Raman imaging microscopy; characterise defects, roughness, elasticity and electronic properties using Atomic Force Microscopy (AFM); evaluate structure and elemental composition with the electron microscopy techniques: EDS, EBSD, and the revolutionary BEX (Backscattered Electron and X-Ray).
The Oxford Instruments team are looking forward to welcoming you to San Francisco, California, USA. If you would like to book a meeting with us during the event to discuss your current projects and workflows, please complete the form below. For further information go to the event webpage. The event is co-located with SPIE Photonics West.
Location
San Francisco, California | US
Date
27-29 January 2025
Booth Number
6301
Businesses
Asylum Research, Plasma Technology, WITec | Raman
Dr Andrew Newton
Poster Session: 29 January 2025 • 6:00 PM - 8:00 PM PST | Moscone West, Room 2003 (Level 2)
Title: Removal of etch damage in GaN mesas for μLED applications
We report isotropic etch processes which have been used to remove the damaged subsurface layers caused in mesa etch processing. These damage layers lie in both the plane of the etch front and the sidewalls of the LED mesa structures. Our processes are shown to improve luminescence from etch damaged n-GaN, to up to nearly 90% of the luminescence of undamaged n-GaN. This is potentially a significant step on the road to much smaller LEDs where sidewall damage dominates light extraction efficiency.
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