Oxford Instruments Plasma Technology is excited to organise a free in-person Customer Technical Update event.
This event will be held in Tokyo, Japan, in collaboration with Laytec.
We invite you to choose the day that works best for you. You can select either Thursday, December 12, 2024, or Friday, December 13, 2024, the content presented will be the same on both days.
Please, indicate your preferred day and register your interest. We will share the details with you soon.
Download the Program overview below.
Location
Tokyo, Japan
Business
Plasma Technology
Customer Technical Update
is in collaboration with
or
Register Your Interest for the event on the 13th of December*Registration request is not confirmation of participation. Attendance is at the discretion of Oxford Instruments.
Welcome, Introduction Company Overview
• Corporate Organization and Oxford Instruments Plasma Technology
• Workshop objective
lnP and GaAs Lasers - III-V Material Processing
• Production solution for etching of lnP transceivers and GaAs VCSEL.
• Etch III-V etching process overview for R&D.
SiC PE - Material Processing
• Plasma etch and deposition solutions for current and next generation SiC power devices.
• SiC substrate Epi ready cost reduction for 150mm and 200mm wafers with plasma polishing.
Coffee Break sponsored by Hakuto
GaN PE/RF - Atomic Scale Processing
• Production-qualified Plasma Atomic Layer Deposition for GaN HEMT passivation.
• Low damage, reliable etch processes for p-GaN HEMT and recessed MISHEMT manufacturing.
Endpoint solutions
• Leading endpoint accuracy
• End pointing materials
Wrap up and next steps
• O&A
• Further engagement
Happy hour
Welcome, Introduction Company Overview
• Corporate Organization and Oxford Instruments Plasma Technology
• Workshop objective
lnP and GaAs Lasers - III-V Material Processing
• Production solution for etching of lnP transceivers and GaAs VCSEL.
• Etch III-V etching process overview for R&D.
SiC PE - Material Processing
• Plasma etch and deposition solutions for current and next generation SiC power devices.
• SiC substrate Epi ready cost reduction for 150mm and 200mm wafers with plasma polishing.
Coffee Break sponsored by Hakuto
GaN PE/RF - Atomic Scale Processing
• Production-qualified Plasma Atomic Layer Deposition for GaN HEMT passivation.
• Low damage, reliable etch processes for p-GaN HEMT and recessed MISHEMT manufacturing.
Endpoint solutions
• Leading endpoint accuracy
• End pointing materials
Wrap up and next steps
• O&A
• Further engagement
Coffee Light - refreshments
*Registration request is not confirmation of participation. Attendance is at the discretion of Oxford Instruments.
© Oxford Instruments 2024