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TEOS PECVD module
Delivery module enabling TEOS-based PECVD for SiO2 in Plasmalab®System100 and PlasmalabSystem133 process tools
TEOS (tetraethoxysilane, tetraethyl orthosilicate) offers an alternative PECVD precursor to the commonly-used silane (SiH4) for applications such as photonics and dielectric layers in which high quality, conformal deposition of silicon dioxide (SiO2) is required. In particular, TEOS-based PECVD enables approximately 85% conformal step coverage, and the ability to control the degree of step coverage by controlling the oxygen radicals within the plasma to vary deposition directionality.
Excellent control in silicon dioxide deposition
The complete TEOS PECVD system enables
- High quality, conformal deposition of SiO2 for photonics, dielectric layers and other structures
- Control of film stress by pulsed high/low frequency power mixing for selectable compressive, tensile or low-stress films
- Control of deposition directionality and hence degree of step coverage by controlling oxygen radicals
Integrated purpose-designed solution
The TEOS delivery module offers an integrated purpose-designed solution with
- Optimised heated delivery lines to ensure efficient, high-uniformity SiO2 PECVD processes
- Easy source access and changeover, with an optional glovebox fitting onto the module for maximum safety, and the ability to connect the module into a cleanroom extraction system
- Flexible mounting options - the module may be either directly mounted onto the PlasmalabSystem100 or PlasmalabSystem133 process tool, or wall-mounted
- Available as upgrade to existing PlasmalabSystem100 and PlasmalabSystem133 PECVD tools
Easy access to the TEOS precursor source in the heated delivery module
Safe TEOS pot change-over using the optional clip-on glovebox.
TEOS PECVD showing 84% conformal step coverage (415 nm horizontal, 350 nm sidewall) SiO2 on Si step structure
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Downloads and Links
- TEOS PECVD delivery module brochure
(2,001Kb)
- PlasmalabSystem100Pro Brochure
(1,598Kb)
