Technologies and Devices International (TDI)

Technologies and Devices International (TDI)

Hydride Vapour Phase Epitaxy

TDI is a world leader in the development of Hydride Vapour Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors such as GaN, AlN, AlGaN, InN, InGaN.

For further information on TDI templates and substrates please click here.

TDI - An Oxford Instruments Company

Oxford Instruments Plasma Technology offers flexible, configurable process tools and leading-edge processes for the precise, controllable and repeatable engineering of micro- and nano-structures. Using TDI’s HVPE technology, Oxford Instruments can produce tools for applications such as High Brightness Light Emitting Diodes (HBLEDs), Laser Diodes and High Electron Mobility Transistors (HEMT).

Key Features of HVPE technology

Flexible growth rates, from 1 µm/hour (for submicron layer control) to1000 µm/hour (for fast buffer layer growth)
Low dislocation density
Wide range of layer thickness up to 100 µm
Cost effective templates for device manufacturing
P and N type doped materials are available

Processing capabilities offered through TDI laboratories

Custom design Epitaxy
Many templates supplied from stock
Low to medium volume templates on 2”, 3” & 4” wafers as standard
Research and development programmes & contracts undertaken for specific client requirements

Atomic smooth surface of 10-µm thick GaN on sapphire with roughness RMS 0.9 nm

Multi-layer structure of AlGaN/GaN with sharp interfaces

Technologies and Devices International (TDI)