Innovation History

1970's

• First EDS system with a computer based multi-channel analyser
• First EDS to use a time variant pulse processor, which attained levels of resolution and spectrum stability at high count rates that exceeded the theoretical expectations of the time

1980's

• Queen’s Award - first detector to see Boron on electron microscope
• Developed crystal conditioner circuit for in situ detector de-icing for optimal light element performance
• Developed PentaFET® - first charge reset FET to replace optical FETs and reduction in resolution of all Si(Li) detectors for EDS
• First EDS detector to detect Be with the introduction of the PentaFET® detector
• First system to achieve acquisition rates in excess of 30,000 cps acquisition rate into spectrum
• First EDS detector to be fully computer contgenerate significant rolled for parameter optimisation on installation
• First digitally controlled time-variant pulse processor - XP2
• First pulse processor to use computer control for automatic calibration

1990's

• R&D 100 Award 1990 - X-ray spectrometer with improved sensitivity using new design of FET (PentaFET®)
• First EDS detector to guarantee 115eV resolution at Mn with the introduction of the Link GEM HpGe detector
• First EDS detector to guarantee 65eV resolution at F with the introduction of the Link GEM HpGe detector
• First pulse processor with digital processing and high rate zero strobe - DXP50

2000's

• First EDS system to use IEEE 1394 architecture
• First EDS hardware to guarantee best resolution at 2,500 cps with the introduction of the INCAx-sight detector and INCAx-stream pulse processor
• First EDS hardware to guarantee stability of output between 1,000 and 10,000cps to less than 1eV with the introduction of the INCAx-sight detector and INCAx-stream pulse processor